JPH0254670B2 - - Google Patents

Info

Publication number
JPH0254670B2
JPH0254670B2 JP58058808A JP5880883A JPH0254670B2 JP H0254670 B2 JPH0254670 B2 JP H0254670B2 JP 58058808 A JP58058808 A JP 58058808A JP 5880883 A JP5880883 A JP 5880883A JP H0254670 B2 JPH0254670 B2 JP H0254670B2
Authority
JP
Japan
Prior art keywords
cell
metal power
contacts
gate
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58058808A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59938A (ja
Inventor
Gandeiini Maruko
Toreuisan Dante
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KUSERUTO CHENTORO SUTEYUDEI E LAB TEREKOMYUNIKATSUIOONI SpA
Original Assignee
KUSERUTO CHENTORO SUTEYUDEI E LAB TEREKOMYUNIKATSUIOONI SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KUSERUTO CHENTORO SUTEYUDEI E LAB TEREKOMYUNIKATSUIOONI SpA filed Critical KUSERUTO CHENTORO SUTEYUDEI E LAB TEREKOMYUNIKATSUIOONI SpA
Publication of JPS59938A publication Critical patent/JPS59938A/ja
Publication of JPH0254670B2 publication Critical patent/JPH0254670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/923—Active solid-state devices, e.g. transistors, solid-state diodes with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP58058808A 1982-04-15 1983-04-05 集積回路のゲ−ト・アレイのための基本セル Granted JPS59938A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT67501A/82 1982-04-15
IT67501/82A IT1191188B (it) 1982-04-15 1982-04-15 Cella elementare per reti di porte logiche a circuito integrato

Publications (2)

Publication Number Publication Date
JPS59938A JPS59938A (ja) 1984-01-06
JPH0254670B2 true JPH0254670B2 (en]) 1990-11-22

Family

ID=11302946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58058808A Granted JPS59938A (ja) 1982-04-15 1983-04-05 集積回路のゲ−ト・アレイのための基本セル

Country Status (10)

Country Link
US (1) US4595940A (en])
EP (1) EP0092176B1 (en])
JP (1) JPS59938A (en])
AT (1) ATE36207T1 (en])
CA (1) CA1187624A (en])
DE (2) DE3377603D1 (en])
DK (1) DK162867C (en])
ES (1) ES521503A0 (en])
IT (1) IT1191188B (en])
NO (1) NO164947C (en])

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783749A (en) * 1985-05-21 1988-11-08 Siemens Aktiengesellschaft Basic cell realized in the CMOS technique and a method for the automatic generation of such a basic cell
DE4002780C2 (de) * 1990-01-31 1995-01-19 Fraunhofer Ges Forschung Basiszelle für eine kanallose Gate-Array-Anordnung
US5291043A (en) * 1990-02-07 1994-03-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having gate array
US6399972B1 (en) * 2000-03-13 2002-06-04 Oki Electric Industry Co., Ltd. Cell based integrated circuit and unit cell architecture therefor
JP2011242541A (ja) * 2010-05-17 2011-12-01 Panasonic Corp 半導体集積回路装置、および標準セルの端子構造
CA2977942C (en) 2010-12-20 2021-08-03 The Nielsen Company (Us), Llc Methods and apparatus to determine media impressions using distributed demographic information
AU2013204865B2 (en) 2012-06-11 2015-07-09 The Nielsen Company (Us), Llc Methods and apparatus to share online media impressions data

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1440512A (en) * 1973-04-30 1976-06-23 Rca Corp Universal array using complementary transistors
JPS5925381B2 (ja) * 1977-12-30 1984-06-16 富士通株式会社 半導体集積回路装置
US4356504A (en) * 1980-03-28 1982-10-26 International Microcircuits, Inc. MOS Integrated circuit structure for discretionary interconnection
JPS5749253A (en) * 1980-09-09 1982-03-23 Toshiba Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
DK162867C (da) 1992-05-04
NO164947C (no) 1990-11-28
NO831320L (no) 1983-10-17
JPS59938A (ja) 1984-01-06
EP0092176A2 (en) 1983-10-26
IT8267501A0 (it) 1982-04-15
ATE36207T1 (de) 1988-08-15
DE92176T1 (de) 1985-10-24
NO164947B (no) 1990-08-20
DK162867B (da) 1991-12-16
DK158383D0 (da) 1983-04-11
DE3377603D1 (en) 1988-09-08
CA1187624A (en) 1985-05-21
IT1191188B (it) 1988-02-24
EP0092176B1 (en) 1988-08-03
ES8404111A1 (es) 1984-04-01
US4595940A (en) 1986-06-17
DK158383A (da) 1983-10-16
EP0092176A3 (en) 1985-08-21
ES521503A0 (es) 1984-04-01

Similar Documents

Publication Publication Date Title
US4733288A (en) Gate-array chip
US6765245B2 (en) Gate array core cell for VLSI ASIC devices
EP0133958B1 (en) A masterslice semiconductor device
US5384472A (en) Symmetrical multi-layer metal logic array with continuous substrate taps and extension portions for increased gate density
US6166560A (en) Basic cell structure having a plurality of transistors for master slice type semiconductor integrated circuit device
US4884118A (en) Double metal HCMOS compacted array
KR890004568B1 (ko) 마스터슬라이스형 반도체장치
US4661815A (en) Gate array integrated device having mixed single column type and matrix type arrays
JPH058585B2 (en])
JPH0434309B2 (en])
US5635737A (en) Symmetrical multi-layer metal logic array with extension portions for increased gate density and a testability area
JPH0254670B2 (en])
JPH0480538B2 (en])
JPH06509911A (ja) 連続基板タップを備えた対称な多層金属論理アレイ
JP2540222B2 (ja) 集積回路
US5422581A (en) Gate array cell with predefined connection patterns
JPS586157A (ja) Ｃｍｏｓマスタ・スライスｌｓｉ
JP2522678B2 (ja) Ｃｍｏｓ集積回路装置
JPH0475664B2 (en])
JPS58194355A (ja) 半導体集積回路装置
JPH0371789B2 (en])
JPH0329187B2 (en])
JP2821063B2 (ja) 半導体集積回路装置
JPH02501876A (ja) 改良された密度のセミカスタム集積回路チップ
JPS59232442A (ja) 半導体集積回路